Sinrace Power Supply Technology (Shenzhen) Co., Ltd.
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What true advantages you will have if you choose us?
We are a professional manufacturer of power supply with 16years' history already, and we are always with you for offering you answers on power supply questions and supplying you with enthusiastic services. The emphasis and the main responsibility for us is to meet our customers's needs unceasingly.We believe those customers are our partners who shall build long-time and reliable business relationship with us.
Certifications
| Third-generation high-speed 600V and 1200V IGBT break boundaries of the switching and efficiency |
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Infineon Technologies AG has introduced high-speed 600 V and 1200V 3 (third generation) IGBT products series recently. The series is optimized , applied for high frequency and hard switching applications, in the aspects of reducing the switching losses achieving outstanding efficiency, it sets a new benchmark, and meet the application requirements of switching frequency up to 100 kHz to. In recent years, the discrete IGBT needs of a variety of products has prompted designers to seek IGBT with optimized characteristics, such as switching and conduction losses optimization ,in order to give full play to the product performance. Infineon's new 600 V and 1200 V high-speed 3-series IGBT are suitable for welding, solar inverters, switching power supplies and uninterruptible power supply (SMPS and UPS) and other high-frequency applications, helping to maximize system performance. Said by senior marketing manager Roland Stele of IGBT power discrete devices of Infineon: "In recent years, industrial drives, induction heating, welding, UPS and solar inverter applications have a substantial increasing demand for IGBT. All these products need to have the power switch with specific optimization features. Infineon provides a new generation of breakthrough IGBT aimed at optimizing the high frequency applications, with minimum switching losses and improves system efficiency.” The new high-speed 3 IGBT series is optimized , applied for products which switching frequency is up to 100 kHz. It is relative to the previous generation devices, the total decrease by 35%. Significantly reducing of the turn-off loss is mainly derived from the very short time of tail current. Tail current time is contracted by 75 percent, and showed turn-off switch behavior similar to the MOSFET. As Vce (sat) (on-state saturation voltage) is also critical to the overall loss, so the need achieve the best balance between in the switching losses and conduction losses. The new high-speed 3-series not only has very low switching losses, and has lower conduction losses, mainly due to using a lower on-state saturation voltage which itself has, mature Trenchstop technology. For high-speed 3 series with the freewheeling diode IGBT, its the size of the diode has been optimized , applied for high-speed switching, while maintaining a high softness, make the products with excellent performance of anti-electromagnetic interference. |
